Prof. Paul Hurley currently the Head of the Nanoelectronic Materials and Devices Group at the Tyndall National Institute and a Research Professor at University College Cork. Paul received an Intel Outstanding Researcher award for his work on electrically active defects in high-k/III-V metal-oxide-semiconductor (MOS) system in 2012. Paul’s research group are exploring alternative semiconductor materials and device structures aimed at improving energy efficiency in the next generation of logic switches which will be used in applications, covering: nanoelectronics, flexible electronics, mobile communications and low power sensor technologies.
Paul leads a research team of around ten PhD students, post-doctoral researchers, visiting students and Tyndall Research staff who perform research into alternative semiconductor materials and device structures aimed at improving the energy efficiency in the next generation of logic devices. In particular the group are working on III-V and 2D (e.g., MoS2, WSe2) semiconductors and their interfaces with metals and oxides which will form the heart of logic devices incorporating these materials. The group are also exploring the use of metal-oxide-semiconductor (MOS) systems for the creation of solar fuels through water splitting reactions
Prof. Hurley is co-lead of AMBERs Materials for ICT research theme investigating Synaptic transistors using 2D materials, 2D & Oxide Semiconductors for electronic device applications, Resistive switching in single/few layer 2 D materials, Ions in oxides as a new class of memory to realise dedicated Neuromorphic hardware for the development of next generation Integrated Circuits (ICs) is to interleave memory and logic layers with sensing and RF communication through 3D integration and the development of energy efficient AI processing.
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